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000885755 1001_ $$0P:(DE-HGF)0$$aJulsgaard, Brian$$b0$$eCorresponding author
000885755 245__ $$aCarrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy
000885755 260__ $$aWashington, DC$$bOSA$$c2020
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000885755 520__ $$aWe present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time response of 75 ps. The detection system is based on optical parametric three-wave mixing, operates at room temperature, has spectral resolving power, and is shown to be well suited for investigating dynamical processes in germanium-tin alloys. In particular, the carrier lifetime of a direct-bandgap Ge1−
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000885755 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b1
000885755 7001_ $$0P:(DE-HGF)0$$aTidemand-Lichtenberg, Peter$$b2
000885755 7001_ $$0P:(DE-HGF)0$$aPedersen, Christian$$b3
000885755 7001_ $$0P:(DE-HGF)0$$aIkonic, Zoran$$b4
000885755 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b5
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