% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Li:885906,
      author       = {Li, Huimin},
      title        = {{Z}inc {O}xide / {N}anocrystalline {S}ilicon {C}ontacts for
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      volume       = {516},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2020-04170},
      isbn         = {978-3-95806-508-6},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Energie
                      $\&$ Umwelt / Energy $\&$ Environment},
      pages        = {VIII, 135 S.},
      year         = {2020},
      note         = {RWTH Aachen, Diss., 2019},
      abstract     = {The silicon heterojunction (SHJ) solar cell is one of the
                      most promising technologies and draws intensive attention
                      due to its high conversion efficiency with low temperature
                      coefficient and low energy consumption in production.
                      Reducing the cost of cell fabrication is one of the key
                      challenges to overcome for mass production. Usage of
                      abundant materials and low-cost scalable production
                      processes is a way to reduce cost. This work is focused on
                      the replacement of conventional indium tin oxide (ITO) with
                      aluminum-doped zinc oxide (AZO), which is a more
                      environmentally friendly, abundant, and less costly
                      transparent conductive oxide material. Layers of AZO were
                      prepared with industrially relevant magnetron sputtering
                      process at low temperature to address both scalability and
                      cost reduction for future production lines. Optical and
                      electronic properties of AZO implemented in rear-emitter SHJ
                      solar cells is addressed in this study. To reduce parasitic
                      absorption of the window layer and form proper contact
                      between doped silicon (Si) layer and AZO, doped hydrogenated
                      nanocrystalline Si (n-type or p-type nc-Si:H)layers were
                      used in the SHJ solar cells instead of the conventional
                      doped hydrogenated amorphous Si (n-type or p-type a-Si:H)
                      layers. The optical and electrical properties of doped
                      nc-Si:H layers and AZO films were optimized for the
                      application in SHJ solar cells. Moreover, the influence of
                      AZO sputtering on the passivation quality of Si layer stacks
                      was investigated and the contacts at the interfaces between
                      AZO and p-type Si layers were studied. Furthermore, loss
                      analysis of photovoltaic parameters, such as open circuit
                      voltage (V$_{oc}$), fill factor (FF), series resistance
                      (R$_{s}$), and short circuit current density (J$_{sc}$) of
                      SHJ solar cells with AZO was carried out after the
                      experimental analysis. Various contact combinations between
                      AZO and doped Si layers were tested in SHJ solar cells. It
                      was observed that the solar cells with the combination of
                      AZO and doped amorphous Si layers or n-type nc-Si:H layer
                      operated properly. However, severe s-shaped illuminated
                      current density voltage(J-V) curves were observed in SHJ
                      solar cells when AZO was in contact with p-type nc-Si:H
                      layers. The s-shaped J-V characteristic is a result of a
                      carrier collection barrier at the rear side of the device
                      located at the interface between p-type nc-Si:H and AZO.
                      Increasing the doping inp-type nc-Si:H layer or inserting a
                      seed layer prior to the p-type nc-Si:H layer resulted
                      insuppression of the contact barrier. However, increase of
                      either the doping concentration or the sputtering
                      temperature of AZO films did not contribute to the reduction
                      of contact barrier. [...]},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2020120114},
      url          = {https://juser.fz-juelich.de/record/885906},
}