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@PHDTHESIS{Li:885906,
author = {Li, Huimin},
title = {{Z}inc {O}xide / {N}anocrystalline {S}ilicon {C}ontacts for
{S}ilicon {H}eterojunction {S}olar {C}ells},
volume = {516},
school = {RWTH Aachen},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2020-04170},
isbn = {978-3-95806-508-6},
series = {Schriften des Forschungszentrums Jülich. Reihe Energie
$\&$ Umwelt / Energy $\&$ Environment},
pages = {VIII, 135 S.},
year = {2020},
note = {RWTH Aachen, Diss., 2019},
abstract = {The silicon heterojunction (SHJ) solar cell is one of the
most promising technologies and draws intensive attention
due to its high conversion efficiency with low temperature
coefficient and low energy consumption in production.
Reducing the cost of cell fabrication is one of the key
challenges to overcome for mass production. Usage of
abundant materials and low-cost scalable production
processes is a way to reduce cost. This work is focused on
the replacement of conventional indium tin oxide (ITO) with
aluminum-doped zinc oxide (AZO), which is a more
environmentally friendly, abundant, and less costly
transparent conductive oxide material. Layers of AZO were
prepared with industrially relevant magnetron sputtering
process at low temperature to address both scalability and
cost reduction for future production lines. Optical and
electronic properties of AZO implemented in rear-emitter SHJ
solar cells is addressed in this study. To reduce parasitic
absorption of the window layer and form proper contact
between doped silicon (Si) layer and AZO, doped hydrogenated
nanocrystalline Si (n-type or p-type nc-Si:H)layers were
used in the SHJ solar cells instead of the conventional
doped hydrogenated amorphous Si (n-type or p-type a-Si:H)
layers. The optical and electrical properties of doped
nc-Si:H layers and AZO films were optimized for the
application in SHJ solar cells. Moreover, the influence of
AZO sputtering on the passivation quality of Si layer stacks
was investigated and the contacts at the interfaces between
AZO and p-type Si layers were studied. Furthermore, loss
analysis of photovoltaic parameters, such as open circuit
voltage (V$_{oc}$), fill factor (FF), series resistance
(R$_{s}$), and short circuit current density (J$_{sc}$) of
SHJ solar cells with AZO was carried out after the
experimental analysis. Various contact combinations between
AZO and doped Si layers were tested in SHJ solar cells. It
was observed that the solar cells with the combination of
AZO and doped amorphous Si layers or n-type nc-Si:H layer
operated properly. However, severe s-shaped illuminated
current density voltage(J-V) curves were observed in SHJ
solar cells when AZO was in contact with p-type nc-Si:H
layers. The s-shaped J-V characteristic is a result of a
carrier collection barrier at the rear side of the device
located at the interface between p-type nc-Si:H and AZO.
Increasing the doping inp-type nc-Si:H layer or inserting a
seed layer prior to the p-type nc-Si:H layer resulted
insuppression of the contact barrier. However, increase of
either the doping concentration or the sputtering
temperature of AZO films did not contribute to the reduction
of contact barrier. [...]},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
urn = {urn:nbn:de:0001-2020120114},
url = {https://juser.fz-juelich.de/record/885906},
}