%0 Journal Article
%A Liu, Yong
%A Pomaska, Manuel
%A Duan, Weiyuan
%A Kim, Do Yun
%A Köhler, Malte
%A Breuer, Uwe
%A Ding, Kaining
%T Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells
%J Advanced engineering materials
%V 22
%N 6
%@ 1527-2648
%C Frankfurt, M.
%I Deutsche Gesellschaft für Materialkunde
%M FZJ-2020-04205
%P 1900613 -
%D 2020
%X Herein, the effectiveness of post‐deposition catalytic‐doping (cat‐doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc‐Si:H), nanocrystalline silicon oxide (nc‐SiOx:H), and microcrystalline silicon carbide (μc‐SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) profiles by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy films. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat‐doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is confirmed by using different gases during the cat‐doping process.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000487626800001
%R 10.1002/adem.201900613
%U https://juser.fz-juelich.de/record/885978