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000887780 037__ $$aFZJ-2020-04417
000887780 1001_ $$0P:(DE-Juel1)166093$$aMüller, David$$b0$$eCorresponding author$$ufzj
000887780 1112_ $$aElectronic Materials and Applications$$cOrlando, FL$$d2020-01-22 - 2020-01-24$$gEMA$$wUSA
000887780 245__ $$aThere is no Fe4+: What X-Ray spectroscopy can tell you about point defects (and what not)
000887780 260__ $$c2020
000887780 3367_ $$033$$2EndNote$$aConference Paper
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000887780 3367_ $$2ORCID$$aLECTURE_SPEECH
000887780 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1605694963_501$$xInvited
000887780 520__ $$aCharged point defects are an integral part of defect equilibria in solid state ionics, especially when reactions with a gas or liquid are involved. With the advent of X-ray spectroscopic methods made possible in atmospheres approaching ambient pressure and at elevated temperatures it has become tempting to observe these ions and their charge states directly as surface and bulk redox processes take place. Though with the right checks and balances this approach can give, and has given, invaluable insights into mechanisms governing electrochemical properties of solids and their interaction with gases and liquids, it has also led to many misconceptions. In this presentation, I will use prototypical materials such as (La,Sr)(Fe,Co)O3-δ and Sr(Ti,Co)O3-δ utilized in solid state electrochemistry to showcase the strengths and limitations of in situ X-Ray absorption (XAS) and photoemission spectroscopy (XPS). The secession from using XAS and XPS to (attempt to) simply determine formal oxidation states as a function of temperature, chemistry and atmosphere has, for example, led to recognition of the role of the transition metal in the perovskite structure in the former and peculiarities in the conductions mechanism of the latter compound.
000887780 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
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000887780 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)166093$$aForschungszentrum Jülich$$b0$$kFZJ
000887780 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000887780 9141_ $$y2020
000887780 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
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