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@ARTICLE{Kindelmann:888295,
author = {Kindelmann, Moritz and Stamminger, Mark and Schön, Nino
and Rasinski, Marcin and Eichel, Rüdiger‐A. and Hausen,
Florian and Bram, Martin and Guillon, Olivier},
title = {{E}rosion behavior of {Y} 2 {O} 3 in fluorine‐based
etching plasmas: {O}rientation dependency and reaction layer
formation},
journal = {Journal of the American Ceramic Society},
volume = {104},
number = {3},
issn = {1551-2916},
address = {Westerville, Ohio},
publisher = {Soc.},
reportid = {FZJ-2020-04821},
pages = {1465-1474},
year = {2020},
abstract = {Even though advanced ceramics are widely applied as
consumables in semiconductor etching processes, the erosion
mechanisms and connected surface phenomena are not fully
understood. Through the interaction with reactive species
and ion bombardment during the plasma exposure, oxide
ceramic materials like Y2O3 are eroded by a physicochemical
mechanism. In this study, fundamental phenomena of
surface‐plasma interactions were investigated directly at
the surface as well as in the near‐surface region after
exposure to fluorine‐based etching plasmas. A
straightforward re‐localization technique was used to
investigate the microstructural features before and after
the plasma exposure for up to 2 hours. Electron microscopy
methods (scanning electron microscopy, electron backscatter
diffraction) were coupled with atomic force microscopy,
secondary ion mass spectroscopy, and transmission electron
microscopy to study the surface topography and the
corresponding reaction layer. Direct correlation of the
microstructure before plasma exposure with the surface
topography reveals a novel orientation‐dependent erosion
mechanism that forms plateau‐like structures. Furthermore,
the in‐depth analysis of the near‐surface area
highlights the influence of the applied bias voltage on the
physical damage and chemical gradient formation due to
plasma exposure. The combined investigation of surface
morphology and near‐surface properties reveals new
fundamental aspects of the erosion behavior of
polycrystalline yttria in CF4‐based etching plasmas.},
cin = {IEK-1 / IEK-4 / IEK-9},
ddc = {660},
cid = {I:(DE-Juel1)IEK-1-20101013 / I:(DE-Juel1)IEK-4-20101013 /
I:(DE-Juel1)IEK-9-20110218},
pnm = {131 - Electrochemical Storage (POF3-131) / HITEC -
Helmholtz Interdisciplinary Doctoral Training in Energy and
Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-131 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000592284700001},
doi = {10.1111/jace.17556},
url = {https://juser.fz-juelich.de/record/888295},
}