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@ARTICLE{Jansen:888556,
      author       = {Jansen, Marvin Marco and Perla, Pujitha and Kaladzhian,
                      Mane and von den Driesch, Nils and Janssen, Johanna and
                      Luysberg, Martina and Lepsa, Mihail I. and Grützmacher,
                      Detlev and Pawlis, Alexander},
      title        = {{P}hase-{P}ure {W}urtzite {G}a{A}s {N}anowires {G}rown by
                      {S}elf-{C}atalyzed {S}elective {A}rea {M}olecular {B}eam
                      {E}pitaxy for {A}dvanced {L}aser {D}evices and {Q}uantum
                      {D}isks},
      journal      = {ACS applied nano materials},
      volume       = {3},
      number       = {11},
      issn         = {2574-0970},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2020-05020},
      pages        = {11037 - 11047},
      year         = {2020},
      abstract     = {The control of the crystal phase in self-catalyzed
                      nanowires (NWs) is one of the central remaining open
                      challenges in the research field of III/V semiconductor NWs.
                      While several groups analyzed and revealed the growth
                      dynamics, no experimental growth scheme has been verified
                      yet, which reproducibly ensures the phase purity of binary
                      self-catalyzed grown NWs. Here, we demonstrate the advanced
                      control of self-catalyzed molecular beam epitaxy of GaAs NWs
                      with up to a grade of $100\%$ wurtzite (WZ) phase purity.
                      The evolution of the most important properties during the
                      growth, namely, the contact angle of the Ga droplet, the NW
                      length, and the diameter is analyzed by scanning electron
                      microscopy and transmission electron microscopy. Based on
                      these results, we developed a comprehensive NW growth model
                      for calculating the time-dependent evolution of the Ga
                      droplet contact angle. Using this model, the Ga flux was
                      dynamically modified during the growth to control and
                      stabilize the contact angle in a certain range favoring the
                      growth of phase-pure GaAs NWs. Although focusing on the
                      self-catalyzed growth of WZ GaAs NWs, our model is also
                      applicable to achieve phase-pure zinc blende (ZB) NWs and
                      can be easily generalized to other III/V compounds. The
                      self-catalyzed growth of such NWs may pave the way for
                      substantial improvement of GaAs NW laser devices, the
                      controlled growth of WZ/ZB quantum disks, and novel
                      heterostructured core/multishell NW systems with a pristine
                      crystalline order.},
      cin          = {PGI-9 / ER-C-1 / PGI-10},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ER-C-1-20170209 /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {524 - Controlling Collective States (POF3-524) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143) / DFG
                      project 390534769 - EXC 2004: Materie und Licht für
                      Quanteninformation (ML4Q) (390534769) / DFG project
                      337456818 - Entwicklung von Spin-Qubit Bauelementen aus
                      ZnSe/},
      pid          = {G:(DE-HGF)POF3-524 / G:(DE-HGF)POF3-143 /
                      G:(GEPRIS)390534769 / G:(GEPRIS)337456818},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000595546500051},
      doi          = {10.1021/acsanm.0c02241},
      url          = {https://juser.fz-juelich.de/record/888556},
}