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@ARTICLE{Steffens:888966,
      author       = {Steffens, Jonathan and Weit, Swetlana and Rinder, Johannes
                      and Glatthaar, Raphael and Moller, Soren and Hahn, Giso and
                      Terheiden, Barbara},
      title        = {{I}nfluence of the {C}arbon {C}oncentration on ( p )
                      {P}oly-{S}i{C} x {L}ayer {P}roperties {W}ith {F}ocus on
                      {P}arasitic {A}bsorption in {F}ront {S}ide {P}oly-{S}i{C} x
                      /{S}i{O} x {P}assivating {C}ontacts of {S}olar {C}ells},
      journal      = {IEEE journal of photovoltaics},
      volume       = {10},
      number       = {6},
      issn         = {2156-3403},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2020-05365},
      pages        = {1624 - 1631},
      year         = {2020},
      note         = {Kein Post-Print verfügbar},
      abstract     = {Passivating contacts based on polycrystalline silicon
                      (poly-Si) on an interfacial oxide are limited by parasitic
                      absorption, which may be reduced by incorporation of foreign
                      elements in the poly-Si layer. In this study, the influence
                      of carbon incorporation in the concentration range of
                      6.9-21.5 $at\%$ on boron-doped polycrystalline silicon
                      carbide (poly-SiCx) layer properties is investigated and
                      interpreted in the context of an application as full-area
                      passivating contact on the front side of a solar cell. For
                      constant annealing parameters, higher carbon concentrations
                      reduce the crystallinity of the layers. A high crystallinity
                      in turn is confirmed to be a key parameter for the
                      application in a solar cell as it ensures both low
                      resistivity as well as low parasitic absorption. Low
                      recombination current densities in the range of 7.2-12.2
                      fA/cm 2 are determined for all layers on interfacial oxides
                      on planar surfaces, whereas the differences are rather
                      related to variations in the boron concentration than to the
                      carbon concentration or the deposition parameters. A
                      reduction of the (p) poly-SiCx layer thickness down to 10 nm
                      would yield a parasitic absorption current density of 1.13
                      ± 0.13 mA/cm 2 . Using this value and the lowest measured
                      recombination current density, a simple model predicts a
                      theoretical solar cell efficiency limit of 26.7 ± $0.2\%.$},
      cin          = {IEK-4},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-4-20101013},
      pnm          = {113 - Methods and Concepts for Material Development
                      (POF3-113)},
      pid          = {G:(DE-HGF)POF3-113},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000582595800014},
      doi          = {10.1109/JPHOTOV.2020.3023506},
      url          = {https://juser.fz-juelich.de/record/888966},
}