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@ARTICLE{Yan:889075,
      author       = {Yan, Hong and Börgers, Jacqueline Marie and Rose,
                      Marc-André and Baeumer, Christoph and Kim, Bongju and Jin,
                      Lei and Dittmann, Regina and Gunkel, Felix},
      title        = {{S}toichiometry and {T}ermination {C}ontrol of {L}a{A}l{O}
                      3 /{S}r{T}i{O} 3 {B}ilayer {I}nterfaces},
      journal      = {Advanced materials interfaces},
      volume       = {8},
      number       = {3},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-00011},
      pages        = {2001477},
      year         = {2021},
      abstract     = {Driven by the interest in fundamental physics and potential
                      applications in novel electronic devices, intense effort is
                      devoted to integration of oxide‐based 2D electron gases
                      (2DEGs) with other functional materials. As a classic model
                      system, LaAlO3/SrTiO3 (LAO/STO) has gained significant
                      attentions. However, due to limitations in synthesis and
                      high demands on the involved thin films, the formation of
                      conductive interfaces between artificially grown STO and LAO
                      thin films is an extreme challenge; oftentimes these
                      interfaces remain insulating or show poor transport
                      properties, which inhibits the development of
                      all‐thin‐film devices. Here, by adopting high
                      temperature growth to achieve step‐flow growth mode and
                      fine‐tuning the laser fluence during pulsed laser
                      deposition, high quality homoepitaxial STO thin films with
                      sufficiently low point‐defect concentration and
                      controllable surface termination are obtained. Fully
                      metallic 2DEGs are then realized at interfaces between STO
                      thin films and both crystalline and amorphous LAO
                      overlayers. The observed slightly reduced mobility in the
                      bilayer LAO/STO/STO structures as compared with
                      single‐layer LAO/STO structures is related to residual
                      defect formation during STO synthesis, yielding a disordered
                      metallic oxide system. The results give prospect of
                      multilayer interfaces potentially accessible in superlattice
                      structures and provide a reliable starting point for
                      back‐gated all‐thin‐film field‐effect devices.},
      cin          = {PGI-7 / JARA-FIT / ER-C-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {899 - ohne Topic (POF4-899)},
      pid          = {G:(DE-HGF)POF4-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000598649900001},
      doi          = {10.1002/admi.202001477},
      url          = {https://juser.fz-juelich.de/record/889075},
}