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@ARTICLE{Rieck:889095,
      author       = {Rieck, Jan L. and Hensling, Felix V. E. and Dittmann,
                      Regina},
      title        = {{T}rade-off between variability and retention of memristive
                      epitaxial {S}r{T}i{O} 3 devices},
      journal      = {APL materials},
      volume       = {9},
      number       = {2},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2021-00025},
      pages        = {021110 -},
      year         = {2021},
      abstract     = {We present a study of the trade-off between the retention
                      and variability of SrTiO3-based memristive devices. We
                      identified the applied switching current and the device
                      stoichiometry as main influence factors. We show that the
                      SrO formation at the electrode interface, which has been
                      revealed to improve the device retention significantly, is
                      associated with an increased cycle-to-cycle and
                      device-to-device variability. On the other hand, devices
                      with homogeneous, Ti-terminated SrTiO3–Pt interfaces
                      exhibit poor retention but the smallest variability. These
                      results give valuable insights for the application of
                      memristive SrTiO3 devices as non-volatile memory or in
                      neural networks, where the control of variability is of key
                      relevance.We acknowledge funding from the W2/W3 program of
                      the Helmholtz Association. This research was supported by
                      the Deutsche Forschungsgemeinschaft (Grant No. SFB 917
                      “Nanoswitches”), the Helmholtz Association Initiative
                      and Networking Fund under Project No. SO-092 (Advanced
                      Computing Architectures, ACA), and the Federal Ministry of
                      Education and Research (Project NEUROTEC, Grant No.
                      16ES1133K).},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {523 - Neuromorphic Computing and Network Dynamics
                      (POF4-523) / Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / DFG project 167917811 - SFB 917: Resistiv
                      schaltende Chalkogenide für zukünftige
                      Elektronikanwendungen: Struktur, Kinetik und
                      Bauelementskalierung "Nanoswitches" (167917811) / ACA -
                      Advanced Computing Architectures (SO-092)},
      pid          = {G:(DE-HGF)POF4-523 / G:(BMBF)16ES1133K /
                      G:(GEPRIS)167917811 / G:(DE-HGF)SO-092},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000630052100003},
      doi          = {10.1063/5.0035707},
      url          = {https://juser.fz-juelich.de/record/889095},
}