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@ARTICLE{Rau:889169,
      author       = {Rau, Uwe and Huhn, Vito and Pieters, Bart},
      title        = {{L}uminescence {A}nalysis of {C}harge-{C}arrier
                      {S}eparation and {I}nternal {S}eries-{R}esistance {L}osses
                      in {C}u ( {I}n , {G}a ) {S}e 2 {S}olar {C}ells},
      journal      = {Physical review applied},
      volume       = {14},
      number       = {1},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2021-00092},
      pages        = {014046},
      year         = {2020},
      abstract     = {Cu(In,Ga)Se2 solar cells are investigated by luminescence
                      measurements. We construct the current vs. internal voltage
                      characteristics of these devices from the luminescence
                      intensity at different voltage and light bias conditions. A
                      comparison of these characteristics to electrically measured
                      current vs. voltage curves unveils an internal resistance
                      loss that is strongly dependent on voltage bias and
                      illumination. Especially, we find significant residual
                      luminescence for the device under short circuit conditions.
                      Numerical device simulations reveal that this effect is
                      caused by a drop of the electron Quasi-Fermi-level within
                      the space charge region of the absorber material. We use a
                      modified equivalent circuit model to describe the observed
                      behavior in terms of simple equations. We show that such a
                      voltage dependent series resistance leads to a violation of
                      a linear network theorem which under standard circumstances
                      provides a useful method for the determination of the
                      photocurrent collection efficiency. An analysis of resistive
                      and recombination losses in the devices demonstrates that
                      the internal voltage dependent series resistance causes an
                      efficiency loss of about 1.3 $\%$ (absolute) for a device
                      with an efficiency 13.4 $\%.$ Finally, we show that the
                      observed behavior is general feature of charge carrier
                      separation in solar cells with finite charge carrier
                      mobility and that the intensity of the residual sort circuit
                      luminescence provides valuable information on the efficiency
                      of this process.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000550210500005},
      doi          = {10.1103/PhysRevApplied.14.014046},
      url          = {https://juser.fz-juelich.de/record/889169},
}