% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mueller:889300,
      author       = {Mueller, Michael P. and Gunkel, Felix and Hoffmann-Eifert,
                      Susanne and De Souza, Roger A.},
      title        = {{T}he importance of singly charged oxygen vacancies for
                      electrical conduction in monoclinic {H}f{O} 2},
      journal      = {Journal of applied physics},
      volume       = {129},
      number       = {2},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2021-00192},
      pages        = {025104 -},
      year         = {2021},
      abstract     = {The point-defect structure of monoclinic HfO2 (m-HfO2) was
                      studied by means of equilibrium electrical conductance
                      measurements as a function of temperature 1050≤T/K≤1200
                      and oxygen partial pressure −20≤log(pO2/bar)≤−2. The
                      total conductivity σ displayed similar behavior at each
                      temperature examined. In oxidizing conditions
                      (pO2≥10−7bar), the total conductivity increased with
                      increasing oxygen partial pressure and was assigned to hole
                      conduction. Around 10−10 bar, a region of almost
                      constant conductivity was found; this is ascribed to ionic
                      conduction by means of doubly charged oxygen vacancies. In
                      reducing conditions (pO2≤10−16bar), the total
                      conductivity surprisingly decreased with decreasing oxygen
                      partial pressure. Defect-chemical modeling indicates that
                      this behavior is consistent with the conversion of mobile
                      doubly charged oxygen vacancies into less mobile singly
                      charged vacancies by electron trapping. Point-defect
                      concentrations at the oxygen partial pressures relevant to
                      resistive switching devices are predicted and discussed.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000608037800004},
      doi          = {10.1063/5.0036024},
      url          = {https://juser.fz-juelich.de/record/889300},
}