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100 1 _ |a Mueller, Michael P.
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245 _ _ |a The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
260 _ _ |a Melville, NY
|c 2021
|b American Inst. of Physics
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520 _ _ |a The point-defect structure of monoclinic HfO2 (m-HfO2) was studied by means of equilibrium electrical conductance measurements as a function of temperature 1050≤T/K≤1200 and oxygen partial pressure −20≤log(pO2/bar)≤−2. The total conductivity σ displayed similar behavior at each temperature examined. In oxidizing conditions (pO2≥10−7bar), the total conductivity increased with increasing oxygen partial pressure and was assigned to hole conduction. Around 10−10 bar, a region of almost constant conductivity was found; this is ascribed to ionic conduction by means of doubly charged oxygen vacancies. In reducing conditions (pO2≤10−16bar), the total conductivity surprisingly decreased with decreasing oxygen partial pressure. Defect-chemical modeling indicates that this behavior is consistent with the conversion of mobile doubly charged oxygen vacancies into less mobile singly charged vacancies by electron trapping. Point-defect concentrations at the oxygen partial pressures relevant to resistive switching devices are predicted and discussed.
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700 1 _ |a De Souza, Roger A.
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773 _ _ |a 10.1063/5.0036024
|g Vol. 129, no. 2, p. 025104 -
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|t Journal of applied physics
|v 129
|y 2021
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856 4 _ |u https://juser.fz-juelich.de/record/889300/files/5.0036024.pdf
|y Published on 2021-01-08. Available in OpenAccess from 2022-01-08.
856 4 _ |u https://juser.fz-juelich.de/record/889300/files/hfo2_defects_manuscript_rev.pdf
|y Published on 2021-01-08. Available in OpenAccess from 2022-01-08.
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