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@ARTICLE{Kurth:889309,
      author       = {Kurth, Sina and Wang, Weiyan and Nickich, V. and Pennartz,
                      F. and Haas, Stefan and Nuys, M. and Beyer, W.},
      title        = {{R}aman spectroscopic analysis of the effect of annealing
                      on hydrogen concentration and microstructure of thick hot
                      wire grown a-{S}i:{H} films aimed as precursor layers for
                      crystallized thin film silicon},
      journal      = {Thin solid films},
      volume       = {714},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2021-00201},
      pages        = {138353 -},
      year         = {2020},
      abstract     = {For application as precursor layers for silicon solar cells
                      fabricated by laser liquid phase crystallization, thick
                      amorphous silicon films on glass are of interest. However,
                      for hydrogenated amorphous silicon (a-Si:H) precursor layers
                      containing about 10 $at.\%$ hydrogen, hydrogen needs to be
                      removed prior to liquid phase crystallization to avoid
                      bubble formation and peeling. For this purpose, an at least
                      12 hours annealing procedure up to 550°C is considered
                      necessary thus involving long process time and high costs.
                      In this article, we investigate the use of thick hot wire
                      grown a-Si:H films which turn out to need considerably less
                      time for dehydrogenation than dense plasma-grown a-Si:H. The
                      dehydrogenation process is studied by depth profiles of
                      hydrogen concentration and medium range order (MRO) using
                      Raman spectroscopy analysis at etch pits. The results show
                      already at an annealing temperature of 450°C the
                      disappearance of all detectable H in the substrate-near part
                      and the complete removal of H at 550°C after about 4 hours
                      annealing. We attribute this rather fast hydrogen removal to
                      the formation of interconnected voids primarily in the
                      substrate-near range. In the same range of the film, we find
                      a correlation between hydrogen concentration and medium
                      range order suggesting that a silicon network reconstruction
                      due to hydrogen out-diffusion causes an observed decrease of
                      reciprocal MRO. The results stress the importance of
                      void-related microstructure in the a-Si:H for hydrogen
                      removal at a rather low annealing temperature and short
                      annealing time. Our results suggest that hot wire a-Si:H
                      films which can be grown with a high deposition rate and a
                      rather pronounced void-related microstructure may be well
                      suited as economic precursor layers.},
      cin          = {IEK-5},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {113 - Methods and Concepts for Material Development
                      (POF3-113)},
      pid          = {G:(DE-HGF)POF3-113},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000591877700006},
      doi          = {10.1016/j.tsf.2020.138353},
      url          = {https://juser.fz-juelich.de/record/889309},
}