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@ARTICLE{Yang:889367,
      author       = {Yang, Lin and Wysocki, Lena and Schöpf, Jörg and Jin, Lei
                      and Kovács, András and Gunkel, Felix and Dittmann, Regina
                      and van Loosdrecht, Paul H. M. and Lindfors-Vrejoiu, Ionela},
      title        = {{O}rigin of the hump anomalies in the {H}all resistance
                      loops of ultrathin {S}r{R}u{O} 3 / {S}r{I}r{O} 3
                      multilayers},
      journal      = {Physical review materials},
      volume       = {5},
      number       = {1},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2021-00256},
      pages        = {014403},
      year         = {2021},
      abstract     = {The proposal that very small Néel skyrmions can form in
                      SrRuO3/SrIrO3 epitaxial bilayers and that the electric field
                      effect can be used to manipulate these skyrmions in gated
                      devices strongly stimulated the recent research of SrRuO3
                      heterostructures. A strong interfacial Dzyaloshinskii-Moriya
                      interaction was considered as the driving force for the
                      formation of skyrmions in SrRuO3/SrIrO3 bilayers. Here, we
                      investigated nominally symmetric heterostructures in which
                      an ultrathin ferromagnetic SrRuO3 layer is sandwiched
                      between large spin-orbit coupling SrIrO3 layers, for which
                      the conditions are not favorable for the emergence of a net
                      interfacial Dzyaloshinskii-Moriya interaction. Previously
                      the formation of skyrmions in the asymmetric SrRuO3/SrIrO3
                      bilayers was inferred from anomalous Hall resistance loops
                      showing humplike features that resembled topological Hall
                      effect contributions. Symmetric SrIrO3/SrRuO3/SrIrO3
                      trilayers do not show hump anomalies in the Hall loops.
                      However, the anomalous Hall resistance loops of symmetric
                      multilayers, in which the trilayer is stacked several times,
                      do exhibit the humplike structures, similar to the
                      asymmetric SrRuO3/SrIrO3 bilayers. The origin of the Hall
                      effect loop anomalies likely resides in unavoidable
                      differences in the electronic and magnetic properties of the
                      individual SrRuO3 layers rather than in the formation of
                      skyrmions.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000607538000003},
      doi          = {10.1103/PhysRevMaterials.5.014403},
      url          = {https://juser.fz-juelich.de/record/889367},
}