TY  - JOUR
AU  - Feste, S. F.
AU  - Knoch, J.
AU  - Buca, D.
AU  - Zhao, Q. T.
AU  - Breuer, U.
AU  - Mantl, S.
TI  - Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
JO  - Journal of applied physics
VL  - 107
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-8894
SP  - 044510-6
PY  - 2010
N1  - The authors thank their former colleague Dr. M. Zhang for discussions and his valuable comments. This research has received Nanosil funding from the European Community (FP7, Grant No. 216171) and from the German Federal Ministry of Education via the MEDEA + project DECISIF (Grant No. 2T104).
AB  - We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation induced dopant segregation conserves the dopant slope at the silicide/silicon interface up to NiSi thicknesses of three times the as-implanted peak depth before degrading. Best slopes and highest dopant concentrations are obtained for low implantation energies and thin NiSi layers. We also demonstrate that the steepness of the dopant profile at the NiSi/Si interface can be significantly improved through a two-step annealing process for NiSi formation. For As, 1 keV, 1x10(15) cm(-2), and a 17 nm NiSi layer, a NiSi/Si junction with a dopant slope of 3.2 nm/decade has been obtained. An effective Schottky barrier of Phi(SB)=0.12 eV was determined by low temperature measurements of Schottky diodes with 20 nm NiSi formed by an optimized annealing process.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000275028900099
DO  - DOI:10.1063/1.3284089
UR  - https://juser.fz-juelich.de/record/8894
ER  -