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@ARTICLE{Feste:8894,
      author       = {Feste, S. F. and Knoch, J. and Buca, D. and Zhao, Q. T. and
                      Breuer, U. and Mantl, S.},
      title        = {{F}ormation of steep, low {S}chottky-barrier contacts by
                      dopant segregation during nickel silicidation},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-8894},
      pages        = {044510-6},
      year         = {2010},
      note         = {The authors thank their former colleague Dr. M. Zhang for
                      discussions and his valuable comments. This research has
                      received Nanosil funding from the European Community (FP7,
                      Grant No. 216171) and from the German Federal Ministry of
                      Education via the MEDEA + project DECISIF (Grant No.
                      2T104).},
      abstract     = {We present a systematic analysis of arsenic dopant
                      segregation during nickel silicide formation. The slopes and
                      concentrations of the arsenic dopant profiles at the NiSi/Si
                      interface have been studied as a function of implantation
                      energy, implantation dose, and NiSi thickness. Silicidation
                      induced dopant segregation conserves the dopant slope at the
                      silicide/silicon interface up to NiSi thicknesses of three
                      times the as-implanted peak depth before degrading. Best
                      slopes and highest dopant concentrations are obtained for
                      low implantation energies and thin NiSi layers. We also
                      demonstrate that the steepness of the dopant profile at the
                      NiSi/Si interface can be significantly improved through a
                      two-step annealing process for NiSi formation. For As, 1
                      keV, 1x10(15) cm(-2), and a 17 nm NiSi layer, a NiSi/Si
                      junction with a dopant slope of 3.2 nm/decade has been
                      obtained. An effective Schottky barrier of Phi(SB)=0.12 eV
                      was determined by low temperature measurements of Schottky
                      diodes with 20 nm NiSi formed by an optimized annealing
                      process.},
      keywords     = {J (WoSType)},
      cin          = {ZCH / IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ZCH-20090406 / I:(DE-Juel1)VDB799 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000275028900099},
      doi          = {10.1063/1.3284089},
      url          = {https://juser.fz-juelich.de/record/8894},
}