Hauptseite > Publikationsdatenbank > Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation > print

001     8894
005     20200423202705.0
024 7 _ |a 10.1063/1.3284089
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041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
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100 1 _ |0 P:(DE-Juel1)VDB59675
|a Feste, S. F.
|b 0
|u FZJ
245 _ _ |a Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2010
300 _ _ |a 044510-6
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |0 3051
|a Journal of Applied Physics
|v 107
|x 0021-8979
|y 4
500 _ _ |a The authors thank their former colleague Dr. M. Zhang for discussions and his valuable comments. This research has received Nanosil funding from the European Community (FP7, Grant No. 216171) and from the German Federal Ministry of Education via the MEDEA + project DECISIF (Grant No. 2T104).
520 _ _ |a We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation induced dopant segregation conserves the dopant slope at the silicide/silicon interface up to NiSi thicknesses of three times the as-implanted peak depth before degrading. Best slopes and highest dopant concentrations are obtained for low implantation energies and thin NiSi layers. We also demonstrate that the steepness of the dopant profile at the NiSi/Si interface can be significantly improved through a two-step annealing process for NiSi formation. For As, 1 keV, 1x10(15) cm(-2), and a 17 nm NiSi layer, a NiSi/Si junction with a dopant slope of 3.2 nm/decade has been obtained. An effective Schottky barrier of Phi(SB)=0.12 eV was determined by low temperature measurements of Schottky diodes with 20 nm NiSi formed by an optimized annealing process.
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536 _ _ |0 G:(EU-Grant)216171
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|a NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171)
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653 2 0 |2 Author
|a annealing
653 2 0 |2 Author
|a arsenic
653 2 0 |2 Author
|a doping profiles
653 2 0 |2 Author
|a elemental semiconductors
653 2 0 |2 Author
|a ion implantation
653 2 0 |2 Author
|a nickel compounds
653 2 0 |2 Author
|a Schottky barriers
653 2 0 |2 Author
|a segregation
653 2 0 |2 Author
|a semiconductor doping
653 2 0 |2 Author
|a semiconductor-metal boundaries
653 2 0 |2 Author
|a silicon
700 1 _ |0 P:(DE-HGF)0
|a Knoch, J.
|b 1
700 1 _ |0 P:(DE-Juel1)125569
|a Buca, D.
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700 1 _ |0 P:(DE-Juel1)VDB5539
|a Zhao, Q. T.
|b 3
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700 1 _ |0 P:(DE-Juel1)VDB2782
|a Breuer, U.
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700 1 _ |0 P:(DE-Juel1)VDB4959
|a Mantl, S.
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773 _ _ |0 PERI:(DE-600)1476463-5
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|v 107
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856 7 _ |u http://dx.doi.org/10.1063/1.3284089
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