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@ARTICLE{Wiefels:889691,
      author       = {Wiefels, Stefan and Bengel, Christopher and Kopperberg,
                      Nils and Zhang, Kaihua and Waser, Rainer and Menzel,
                      Stephan},
      title        = {{HRS} {I}nstability in {O}xide-{B}ased {B}ipolar
                      {R}esistive {S}witching {C}ells},
      journal      = {IEEE transactions on electron devices},
      volume       = {67},
      number       = {10},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2021-00315},
      pages        = {4208 - 4215},
      year         = {2020},
      note         = {Kein post-print verfügbar},
      abstract     = {One of the key challenges in the reliability of valence
                      change [valence change-based memory (VCM)] resistive
                      switching random access memories (ReRAMs) is the short-term
                      instability of the programed state. Due to read noise,
                      program verify or shaping algorithms are ineffective and
                      read current (or resistance) distributions always revert to
                      their intrinsic statistics. In this work, we analyze the
                      instability of the high resistive state (HRS) measured on
                      ZrO 2 -based devices via Factorial Hidden Markov Models. The
                      extracted current jumps are explained by distinct ionic
                      jumps via physics-based kinetic Monte Carlo (KMC) models.
                      The simulation results reveal jumps of oxygen vacancies from
                      the densely packed filament (plug) region to a sparsely
                      packed gap (disc) region as origin of the most critical,
                      large current jumps. These findings are used to extend our
                      compact model (JART v1b) by a read noise module. We
                      demonstrate simulated HRS instability in excellent agreement
                      with our experimental data. Whereas the KMC approach
                      provides a physical understanding of the processes
                      underlying the HRS instability, the compact model enables
                      the simulation of read noise up to industrially relevant
                      array scales.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT / JARA-HPC},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / Modelling the Valency Change Memory Effect in
                      Resistive Switching Random Access Memory (RRAM).
                      $(jpgi70_20200501)$ / BMBF-16ES1134 - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC - (BMBF-16ES1134)
                      / Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / Advanced Computing Architectures
                      $(aca_20190115)$},
      pid          = {G:(DE-HGF)POF3-521 / $G:(DE-Juel1)jpgi70_20200501$ /
                      G:(DE-82)BMBF-16ES1134 / G:(BMBF)16ES1133K /
                      $G:(DE-Juel1)aca_20190115$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000572635400044},
      doi          = {10.1109/TED.2020.3018096},
      url          = {https://juser.fz-juelich.de/record/889691},
}