Talk (non-conference) (Other)

FZJ-2021-00372

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Stable redox-based resistive switching non-volatile memories (ReRAM) from ultrathin metal oxide layers for next generation neuromorphic computation

Aussen, S. (Corresponding author)FZJ* ; Hardtdegen, A.FZJ* ; Meledin, A.FZJ* ; Dippel, A. ; Gutowski, O. ; Zimmermann, V. ; Roelsgaard, M. ; Dittmann, R.FZJ* ; Hoffmann-Eifert, S.FZJ*

2020

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)
4. Materialwissenschaft u. Werkstofftechnik (ER-C-2)
5. Neue Materialien und Chemie (PTJ-NMT)

Research Program(s):

1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2020

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