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@ARTICLE{Cheng:889948,
      author       = {Cheng, Yudong and Wahl, Sophia and Wuttig, Matthias},
      title        = {{M}etavalent {B}onding in {S}olids: {C}haracteristic
                      {R}epresentatives, {T}heir {P}roperties, and {D}esign
                      {O}ptions},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {15},
      number       = {3},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-00553},
      pages        = {2000482},
      year         = {2021},
      abstract     = {Heavier chalcogenides display a surprisingly wide range of
                      applications enabled by their unconventional properties.
                      Herein, recent studies of three groups of chalcogenides from
                      a chemical bonding perspective are reviewed to reveal the
                      underlying reason for their wide range of applications. For
                      IV–VI materials (GeTe, SnTe, PbTe, PbSe, and PbS), the
                      unique property portfolio and bond‐breaking behavior are
                      related to a novel chemical bonding mechanism termed
                      “metavalent bonding” (MVB). The same phenomena are also
                      found for several V2VI3 solids (Bi2Te3, Bi2Se3, Sb2Te3, and
                      β‐As2Te3) and some ternary chalcogenides including
                      crystalline (GeTe)1–x(Sb2Te3)x alloys. This provides
                      evidence for the prevalence of MVB in these compounds.
                      Subsequently, a quantum‐chemistry‐based map is
                      presented. Using the transfer and sharing of electrons
                      between adjacent atoms as its two coordinates, materials
                      using MVB are all found in a well‐defined region of the
                      map, characterized by sharing about one electron between
                      adjacent atoms and only small charge transfer. This also
                      implies that the degree of MVB is tailored either via
                      Peierls distortions (electron sharing) or charge transfer
                      (electron transfer), leading to the transition toward
                      covalent bonding and ionic bonding, respectively. The
                      tailoring of MVB provides a new approach for materials
                      design.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000596813900001},
      doi          = {10.1002/pssr.202000482},
      url          = {https://juser.fz-juelich.de/record/889948},
}