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000890070 1001_ $$0P:(DE-HGF)0$$aAbbaspour, E.$$b0$$eCorresponding author
000890070 245__ $$aStudying the switching variability in redox-based resistive switching devices
000890070 260__ $$aDordrecht$$bSpringer Science + Business Media B.V.$$c2020
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000890070 520__ $$aThe variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices.
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000890070 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b1
000890070 7001_ $$0P:(DE-HGF)0$$aJungemann, C.$$b2
000890070 773__ $$0PERI:(DE-600)2065612-9$$a10.1007/s10825-020-01537-y$$gVol. 19, no. 4, p. 1426 - 1432$$n4$$p1426 - 1432$$tJournal of computational electronics$$v19$$x1572-8137$$y2020
000890070 8564_ $$uhttps://juser.fz-juelich.de/record/890070/files/Abbaspour2020_Article_StudyingTheSwitchingVariabilit.pdf$$yRestricted
000890070 8564_ $$uhttps://juser.fz-juelich.de/record/890070/files/Abbaspour_final%20submission.pdf$$yPublished on 2020-06-24. Available in OpenAccess from 2021-06-24.
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