TY  - JOUR
AU  - Abbaspour, E.
AU  - Menzel, Stephan
AU  - Jungemann, C.
TI  - Studying the switching variability in redox-based resistive switching devices
JO  - Journal of computational electronics
VL  - 19
IS  - 4
SN  - 1572-8137
CY  - Dordrecht
PB  - Springer Science + Business Media B.V.
M1  - FZJ-2021-00660
SP  - 1426 - 1432
PY  - 2020
AB  - The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000543042300002
DO  - DOI:10.1007/s10825-020-01537-y
UR  - https://juser.fz-juelich.de/record/890070
ER  -