000890076 001__ 890076
000890076 005__ 20210208142343.0
000890076 0247_ $$2doi$$a10.1021/acsami.0c13020
000890076 0247_ $$2ISSN$$a1944-8244
000890076 0247_ $$2ISSN$$a1944-8252
000890076 0247_ $$2Handle$$a2128/26966
000890076 0247_ $$2altmetric$$aaltmetric:92499516
000890076 0247_ $$2pmid$$a33052645
000890076 0247_ $$2WOS$$aWOS:000586868400054
000890076 037__ $$aFZJ-2021-00666
000890076 082__ $$a600
000890076 1001_ $$00000-0002-1983-6516$$aMilano, Gianluca$$b0$$eCorresponding author
000890076 245__ $$aWater-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism
000890076 260__ $$aWashington, DC$$bSoc.$$c2020
000890076 3367_ $$2DRIVER$$aarticle
000890076 3367_ $$2DataCite$$aOutput Types/Journal article
000890076 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1611415398_30479
000890076 3367_ $$2BibTeX$$aARTICLE
000890076 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000890076 3367_ $$00$$2EndNote$$aJournal Article
000890076 520__ $$aMemristive devices based on electrochemical resistive switching effects have been proposed as promising candidates for in-memory computing and for the realization of artificial neural networks. Despite great efforts toward understanding the nanoionic processes underlying resistive switching phenomena, comprehension of the effect of competing redox processes on device functionalities from the materials perspective still represents a challenge. In this work, we experimentally and theoretically investigate the concurring reactions of silver and moisture and their impact on the electronic properties of a single-crystalline ZnO nanowire (NW). A decrease in electronic conductivity due to surface adsorption of moisture is observed, whereas, at the same time, water molecules reduce the energy barrier for Ag+ ion migration on the NW surface, facilitating the conductive filament formation. By controlling the relative humidity, the ratio of intrinsic electronic conductivity and surface ionic conductivity can be tuned to modulate the device performance. The results achieved on a single-crystalline memristive model system shed new light on the dual nature of the mechanism of how moisture affects resistive switching behavior in memristive devices.
000890076 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000890076 588__ $$aDataset connected to CrossRef
000890076 7001_ $$00000-0001-5045-7533$$aRaffone, Federico$$b1
000890076 7001_ $$0P:(DE-Juel1)162283$$aLuebben, Michael$$b2
000890076 7001_ $$00000-0002-1221-2591$$aBoarino, Luca$$b3
000890076 7001_ $$00000-0002-2920-9882$$aCicero, Giancarlo$$b4
000890076 7001_ $$0P:(DE-Juel1)131014$$aValov, Ilia$$b5
000890076 7001_ $$00000-0002-4703-7949$$aRicciardi, Carlo$$b6
000890076 773__ $$0PERI:(DE-600)2467494-1$$a10.1021/acsami.0c13020$$gVol. 12, no. 43, p. 48773 - 48780$$n43$$p48773 - 48780$$tACS applied materials & interfaces$$v12$$x1944-8252$$y2020
000890076 8564_ $$uhttps://juser.fz-juelich.de/record/890076/files/acsami.0c13020.pdf
000890076 8564_ $$uhttps://juser.fz-juelich.de/record/890076/files/ACS%20AppL%20Mater%20Interfaces%202020.pdf$$yPublished on 2020-10-14. Available in OpenAccess from 2021-10-14.
000890076 909CO $$ooai:juser.fz-juelich.de:890076$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000890076 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131014$$aForschungszentrum Jülich$$b5$$kFZJ
000890076 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000890076 9141_ $$y2020
000890076 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0530$$2StatID$$aEmbargoed OpenAccess
000890076 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bACS APPL MATER INTER : 2018$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0113$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bACS APPL MATER INTER : 2018$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2020-09-02
000890076 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2020-09-02
000890076 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000890076 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000890076 980__ $$ajournal
000890076 980__ $$aVDB
000890076 980__ $$aUNRESTRICTED
000890076 980__ $$aI:(DE-Juel1)PGI-7-20110106
000890076 980__ $$aI:(DE-82)080009_20140620
000890076 9801_ $$aFullTexts