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@ARTICLE{Milano:890076,
      author       = {Milano, Gianluca and Raffone, Federico and Luebben, Michael
                      and Boarino, Luca and Cicero, Giancarlo and Valov, Ilia and
                      Ricciardi, Carlo},
      title        = {{W}ater-{M}ediated {I}onic {M}igration in {M}emristive
                      {N}anowires with a {T}unable {R}esistive {S}witching
                      {M}echanism},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {12},
      number       = {43},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2021-00666},
      pages        = {48773 - 48780},
      year         = {2020},
      abstract     = {Memristive devices based on electrochemical resistive
                      switching effects have been proposed as promising candidates
                      for in-memory computing and for the realization of
                      artificial neural networks. Despite great efforts toward
                      understanding the nanoionic processes underlying resistive
                      switching phenomena, comprehension of the effect of
                      competing redox processes on device functionalities from the
                      materials perspective still represents a challenge. In this
                      work, we experimentally and theoretically investigate the
                      concurring reactions of silver and moisture and their impact
                      on the electronic properties of a single-crystalline ZnO
                      nanowire (NW). A decrease in electronic conductivity due to
                      surface adsorption of moisture is observed, whereas, at the
                      same time, water molecules reduce the energy barrier for Ag+
                      ion migration on the NW surface, facilitating the conductive
                      filament formation. By controlling the relative humidity,
                      the ratio of intrinsic electronic conductivity and surface
                      ionic conductivity can be tuned to modulate the device
                      performance. The results achieved on a single-crystalline
                      memristive model system shed new light on the dual nature of
                      the mechanism of how moisture affects resistive switching
                      behavior in memristive devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {33052645},
      UT           = {WOS:000586868400054},
      doi          = {10.1021/acsami.0c13020},
      url          = {https://juser.fz-juelich.de/record/890076},
}