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@ARTICLE{Valov:890080,
author = {Valov, Ilia and Yang, Yuchao},
title = {{M}emristors with alloyed electrodes},
journal = {Nature nanotechnology},
volume = {15},
number = {7},
issn = {1748-3395},
address = {London [u.a.]},
publisher = {Nature Publishing Group},
reportid = {FZJ-2021-00670},
pages = {510 - 511},
year = {2020},
abstract = {Nanoionic memrisitve devices are one of the most promising
building blocks for next generation hardware architectures
for cognitive type data processing. These highly scalable,
low power, fast operating units offer a broad spectrum of
functionalities at various operation conditions. This makes
them ideal for direct applications such as sensors,
selectors, short and long-term memories and more complex
systems such as internet of things (IoT) and artificial
intelligence (AI). Significant progress has been achieved
implementing memristive devices in circuits for neuromorphic
computing, demonstrating capabilities of pattern
classifcation1, signal/image processing2, context-dependent
network formation3, recognition of spatiotemporal patterns4
and so on. However, despite this highly encouraging progress
the full potential of the memristive technologies is yet to
be reached. The main advantage of the nanoionic memrisitve
devices compared to classical semiconductor technologies is
their operation principle, relying on redox reactions and
transport of ions/atoms instead of electrons. This fact has
been mostly underestimated during the race for fast
integration and product developments, and fewer efforts have
been dedicated to material design through a thorough
understanding of the underlying physical processes.},
cin = {PGI-7 / JARA-FIT},
ddc = {600},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
pubmed = {32514009},
UT = {WOS:000538963500002},
doi = {10.1038/s41565-020-0702-9},
url = {https://juser.fz-juelich.de/record/890080},
}