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@ARTICLE{Ferdowsi:890112,
      author       = {Ferdowsi, Parnian and Ochoa-Martinez, Efrain and Alonso,
                      Sandy Sanchez and Steiner, Ullrich and Saliba, Michael},
      title        = {{U}ltrathin polymeric films for interfacial passivation in
                      wide band-gap perovskite solar cells},
      journal      = {Scientific reports},
      volume       = {10},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2021-00701},
      pages        = {22260},
      year         = {2020},
      abstract     = {Wide band-gap perovskite solar cells have the potential for
                      a relatively high output voltage and resilience in a
                      degradation-inducing environment. Investigating the reasons
                      why high voltages with adequate output power have not been
                      realized yet is an underexplored part in perovskite research
                      although it is of paramount interest for multijunction solar
                      cells. One reason is interfacial carrier recombination that
                      leads to reduced carrier lifetimes and voltage loss. To
                      further improve the Voc of methylammonium lead tri-bromide
                      (MAPbBr3), that has a band-gap of 2.3 eV, interface
                      passivation technique is an important strategy. Here we
                      demonstrate two ultrathin passivation layers consisting of
                      PCBM and PMMA, that can effectively passivate defects at the
                      TiO2/perovskite and perovskite/spiro-OMeTAD interfaces,
                      respectively. In addition, perovskite crystallization was
                      investigated with the established anti-solvent method and
                      the novel flash infrared annealing (FIRA) with and without
                      passivation layers. These modifications significantly
                      suppress interfacial recombination providing a pathway for
                      improved VOC’s from 1.27 to 1.41 V using anti solvent and
                      from 1.12 to 1.36 V using FIRA. Furthermore, we obtained
                      more stable devices through passivation after 140 h where
                      the device retained $70\%$ of the initial performance
                      value.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) /
                      Helmholtz Young Investigators Group (Helmholtz Young
                      Investigators Group: Key Technologies)},
      pid          = {G:(DE-HGF)POF3-121 / Helmholtz Young Investigators Group:
                      Key Technologies},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {33335234},
      UT           = {WOS:000603258300069},
      doi          = {10.1038/s41598-020-79348-1},
      url          = {https://juser.fz-juelich.de/record/890112},
}