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@ARTICLE{Mikulics:890300,
      author       = {Mikulics, M. and Kordoš, P. and Gregušová, D. and Sofer,
                      Z. and Winden, A. and Trellenkamp, Stefan and Moers, Jürgen
                      and Mayer, Joachim and Hardtdegen, H.},
      title        = {{C}onditioning nano-{LED}s in arrays by
                      laser-micro-annealing: {T}he key to their performance
                      improvement},
      journal      = {Applied physics letters},
      volume       = {118},
      number       = {4},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2021-00880},
      pages        = {043101 -},
      year         = {2021},
      abstract     = {A local so-called laser-micro-annealing (LMA) conditioning
                      technology, which is suitable for the fabrication of a large
                      range of hybrid nano-optoelectronic devices, was applied to
                      III-nitride-based nano-light emitting diodes (LEDs). The
                      LEDs with a diameter of ∼100 nm were fabricated in large
                      area arrays and designed for hybrid optoelectronic
                      applications. The LMA process was developed for the precise
                      local conditioning of LED nano-structures. Photoluminescence
                      measurements reveal the enhancement of nano-LED properties,
                      which is in very good agreement with a simple model
                      introduced based on the reduction of the defect layer depth
                      by the LMA process. The experimental data confirm the
                      reduction of the defect layer depth from ∼17 nm to
                      ∼5 nm determined. In consequence, an increase in work
                      currents up to 40 nA at 5 V bias after the LMA procedure
                      as well as high electroluminescence (EL) and output optical
                      power up to 150 nW in the ∼440–445 nm emission
                      wavelength range corresponding to $∼75\%$ wall-plug
                      efficiency were achieved. Additionally, the LEDs'
                      electroluminescence intensities reach the desired values by
                      conditioning the contact/annealed regions of individual LEDs
                      accordingly. Furthermore, the LMA process affects the
                      long-term stability of the electroluminescence (EL)
                      intensity of single nano-LED devices. A study of the EL
                      during 5000 h in the continuous wave operation testing
                      mode revealed a moderate $∼15\%$ decrease in the intensity
                      in comparison to $∼50\%$ for their non-LMA counterparts.
                      Finally, Raman measurements indicate that the “work”
                      temperature for nano-LED conditioned structures decreases.},
      cin          = {ER-C-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {535 - Materials Information Discovery (POF4-535)},
      pid          = {G:(DE-HGF)POF4-535},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000630480400001},
      doi          = {10.1063/5.0038070},
      url          = {https://juser.fz-juelich.de/record/890300},
}