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@ARTICLE{Nadi:890478,
author = {Nadi, Samia and Bittkau, Karsten and Lentz, Florian and
Ding, Kaining and Rau, Uwe},
title = {{D}esign of deterministic light-trapping structures for
thin silicon heterojunction solar cells},
journal = {Optics express},
volume = {29},
issn = {1094-4087},
address = {Washington, DC},
publisher = {Soc.},
reportid = {FZJ-2021-00988},
pages = {7410-7417},
year = {2021},
abstract = {We optically designed and investigated two deterministic
light-trapping concepts named “Hutong” (wafer thickness
dependent, patch-like arrangement of “V” grooves with
alternating orientations) and “VOSTBAT” (one directional
“V” grooves at the front and saw-tooth like structures
at the back) for the application in emerging thin silicon
heterojunction (SHJ) solar cells. Calculated photocurrent
density (Jph) (by weighting the spectrally resolved
absorptance with AM1.5g spectrum and integrating over the
wavelength) showed that both the Hutong and VOSTBAT
structures exceed the Lambertian reference and achieved Jph
of 41.72 mA/cm2 and 41.86 mA/cm2, respectively, on 60 μm
thin wafers in the case of directional, normal incidence.},
cin = {IEK-5},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {1213 - Cell Design and Development (POF4-121) / NextBase -
Next-generation interdigitated back-contacted silicon
heterojunction solar cells and modules by design and process
innovations (727523)},
pid = {G:(DE-HGF)POF4-1213 / G:(EU-Grant)727523},
typ = {PUB:(DE-HGF)16},
pubmed = {33726242},
UT = {WOS:000624968100089},
doi = {10.1364/OE.417848},
url = {https://juser.fz-juelich.de/record/890478},
}