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000890705 005__ 20210623131757.0
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000890705 037__ $$aFZJ-2021-01138
000890705 041__ $$aEnglish
000890705 1001_ $$0P:(DE-Juel1)164849$$aWu, Doudou$$b0$$eCorresponding author
000890705 245__ $$aMBE growth and characterization of InAs based core-shell nanowire arrays$$f2020-01-06 - 2021-02-15
000890705 260__ $$aJülich$$bForschungszentrum Jülich$$c2021
000890705 300__ $$a82 p.
000890705 3367_ $$2DataCite$$aOutput Types/Supervised Student Publication
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000890705 3367_ $$0PUB:(DE-HGF)19$$2PUB:(DE-HGF)$$aMaster Thesis$$bmaster$$mmaster$$s1614610501_8757
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000890705 502__ $$aMasterarbeit, RWTH Aachen, 2020$$bMasterarbeit$$cRWTH Aachen$$d2020$$o2021-02-02
000890705 520__ $$aAmong III-V compound semiconductor nanowires, InAs nanowires have high electronmobility which make them suitable for low power field-effect transistors. The Fermi levelpinning above its conduction band minimum results in easy fabrication of ohmic contacts.However, due to the large surface-to-volume ratio of nanowires, the surface states canhave impact on the electrical property of InAs nanowires and therefore the influence ofpassivation is interesting to be investigated. The first part of this report focuses on themolecular beam epitaxy (MBE) growth of InAs nanowire arrays on prepatterned Si(111)substrates. Using a new in-situ Ga droplet assisted substrate preparation, a highreproducibility of the growth results with high nanowire yield is achieved. Afterwards, thein-situ passivation of InAs nanowire by Al2O3 shell using atomic layer deposition (ALD) issuccessfully realized. In addition, the MBE growth of InAs-Al0.6Ga0.4Sb core-shellnanowire is studied and the growth rate of AlGaSb shell is estimated. The second part isrelated to the fabrication of InAs nanowire-array based device using HSQ as planarizationlayer. After the fabrication, each nanowire array as a whole is connected by top andbottom electrodes vertically. The third part contains the DC electrical characterization ofthe InAs nanowire-array based devices at room temperature. The comparison betweenthe resistivity of unpassivated and Al2O3 passivated InAs nanowire arrays shows that thelatter is lower demonstrating the benefit demonstrating the benefit of passivation.
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000890705 65027 $$0V:(DE-MLZ)SciArea-180$$2V:(DE-HGF)$$aMaterials Science$$x0
000890705 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b1$$eThesis advisor
000890705 8564_ $$uhttps://juser.fz-juelich.de/record/890705/files/MBE%20growth%20and%20characterization%20of%20InAs%20based%20core-shell%20nanowire%20arrays.pdf$$yOpenAccess
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000890705 9131_ $$0G:(DE-HGF)POF4-522$$1G:(DE-HGF)POF4-520$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lNatural, Artificial and Cognitive Information Processing$$vQuantum Computing$$x0
000890705 9141_ $$y2021
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