% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@MASTERSTHESIS{Wu:890705,
      author       = {Wu, Doudou},
      othercontributors = {Lepsa, Mihail Ion},
      title        = {{MBE} growth and characterization of {I}n{A}s based
                      core-shell nanowire arrays},
      school       = {RWTH Aachen},
      type         = {Masterarbeit},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich},
      reportid     = {FZJ-2021-01138},
      pages        = {82 p.},
      year         = {2021},
      note         = {Masterarbeit, RWTH Aachen, 2020},
      abstract     = {Among III-V compound semiconductor nanowires, InAs
                      nanowires have high electronmobility which make them
                      suitable for low power field-effect transistors. The Fermi
                      levelpinning above its conduction band minimum results in
                      easy fabrication of ohmic contacts.However, due to the large
                      surface-to-volume ratio of nanowires, the surface states
                      canhave impact on the electrical property of InAs nanowires
                      and therefore the influence ofpassivation is interesting to
                      be investigated. The first part of this report focuses on
                      themolecular beam epitaxy (MBE) growth of InAs nanowire
                      arrays on prepatterned Si(111)substrates. Using a new
                      in-situ Ga droplet assisted substrate preparation, a
                      highreproducibility of the growth results with high nanowire
                      yield is achieved. Afterwards, thein-situ passivation of
                      InAs nanowire by Al2O3 shell using atomic layer deposition
                      (ALD) issuccessfully realized. In addition, the MBE growth
                      of InAs-Al0.6Ga0.4Sb core-shellnanowire is studied and the
                      growth rate of AlGaSb shell is estimated. The second part
                      isrelated to the fabrication of InAs nanowire-array based
                      device using HSQ as planarizationlayer. After the
                      fabrication, each nanowire array as a whole is connected by
                      top andbottom electrodes vertically. The third part contains
                      the DC electrical characterization ofthe InAs nanowire-array
                      based devices at room temperature. The comparison betweenthe
                      resistivity of unpassivated and Al2O3 passivated InAs
                      nanowire arrays shows that thelatter is lower demonstrating
                      the benefit demonstrating the benefit of passivation.},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {522 - Quantum Computing (POF4-522)},
      pid          = {G:(DE-HGF)POF4-522},
      typ          = {PUB:(DE-HGF)19},
      url          = {https://juser.fz-juelich.de/record/890705},
}