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@ARTICLE{Liu:890726,
author = {Liu, Zhifa and Siekmann, Johanna and Klingebiel, Benjamin
and Rau, Uwe and Kirchartz, Thomas},
title = {{I}nterface {O}ptimization via {F}ullerene {B}lends
{E}nables {O}pen-{C}ircuit {V}oltages of 1.35 {V} in
{CH}3{NH}3{P}b({I}0.8{B}r0.2)3 {S}olar {C}ells},
journal = {Advanced energy materials},
volume = {11},
number = {16},
issn = {1614-6832},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2021-01149},
pages = {2003386},
year = {2021},
abstract = {Nonradiative recombination processes are the biggest
hindrance to approaching the radiative limit of the
open‐circuit voltage for wide bandgap perovskite solar
cells. In addition to high bulk quality, good interfaces and
good energy level alignment for majority carriers at charge
transport layer‐absorber interfaces are crucial to
minimize nonradiative recombination pathways. By tuning the
lowest‐unoccupied molecular‐orbital of electron
transport layers via the use of different fullerenes and
fullerene blends, open‐circuit voltages exceeding 1.35 V
in CH3NH3Pb(I0.8Br0.2)3 device are demonstrated. Further
optimization of mobility in binary fullerenes electron
transport layers can boost the power conversion efficiency
as high as $18.9\%.$ It is noted in particular that the Voc
fill factor product is >1.096 V, which is the highest value
reported for halide perovskites with this bandgap.},
cin = {IEK-5},
ddc = {050},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Photovoltaik und Windenergie (POF4-121)},
pid = {G:(DE-HGF)POF4-121},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000627073600001},
doi = {10.1002/aenm.202003386},
url = {https://juser.fz-juelich.de/record/890726},
}