%0 Journal Article
%A Duan, Weiyuan
%A Bittkau, Karsten
%A Lambertz, Andreas
%A Qiu, Kaifu
%A Yao, Zhirong
%A Steuter, Paul
%A Qiu, Depeng
%A Rau, Uwe
%A Ding, Kaining
%T Improved Infrared Light Management with Transparent Conductive Oxide/Amorphous Silicon Back Reflector in High‐Efficiency Silicon Heterojunction Solar Cells
%J Solar RRL
%V 5
%N 3
%@ 2367-198X
%C Weinheim
%I Wiley-VCH
%M FZJ-2021-01153
%P 2000576
%D 2021
%X To improve the infrared (IR) response, a high-refractive-index intrinsic amorphous silicon (a-Si:H) layer is introduced after metallization of bifacial silicon heterojunction (SHJ) solar cells, resulting in a transparent conductive oxide (TCO)/a-Si:H back reflector, which functions like distributed Bragg reflector (DBR). This concept is demonstrated by both Sentaurus Technology Computer-Aided Design (TCAD) simulation and experimental methods. The TCO/a-Si:H back reflector can increase rear internal reflectance by reducing the transmission loss, thus improving the IR external quantum efficiency. The using of Sn-doped In2O3 (ITO)/a-Si:H back reflector in >23.5% efficiency SHJ solar cells can improve short-circuit current density by 0.4 mA cm2 which is quite similar as using the more expensive ITO/Ag back reflector, while keeping a cell bifaciality of 55%. This brings its advantage for monofacial application case. Future studies would be nice to work on higher transparent back reflectors to broaden the application in bifacial case. This back-reflector design promotes IR response of SHJ solar cells with transferring to a wide variety of TCOs.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000616487200001
%R 10.1002/solr.202000576
%U https://juser.fz-juelich.de/record/890730