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100 | 1 | _ | |a Duan, Weiyuan |0 P:(DE-Juel1)169946 |b 0 |e Corresponding author |
245 | _ | _ | |a Improved Infrared Light Management with Transparent Conductive Oxide/Amorphous Silicon Back Reflector in High‐Efficiency Silicon Heterojunction Solar Cells |
260 | _ | _ | |a Weinheim |c 2021 |b Wiley-VCH |
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520 | _ | _ | |a To improve the infrared (IR) response, a high-refractive-index intrinsic amorphous silicon (a-Si:H) layer is introduced after metallization of bifacial silicon heterojunction (SHJ) solar cells, resulting in a transparent conductive oxide (TCO)/a-Si:H back reflector, which functions like distributed Bragg reflector (DBR). This concept is demonstrated by both Sentaurus Technology Computer-Aided Design (TCAD) simulation and experimental methods. The TCO/a-Si:H back reflector can increase rear internal reflectance by reducing the transmission loss, thus improving the IR external quantum efficiency. The using of Sn-doped In2O3 (ITO)/a-Si:H back reflector in >23.5% efficiency SHJ solar cells can improve short-circuit current density by 0.4 mA cm2 which is quite similar as using the more expensive ITO/Ag back reflector, while keeping a cell bifaciality of 55%. This brings its advantage for monofacial application case. Future studies would be nice to work on higher transparent back reflectors to broaden the application in bifacial case. This back-reflector design promotes IR response of SHJ solar cells with transferring to a wide variety of TCOs. |
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700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 8 |
773 | _ | _ | |a 10.1002/solr.202000576 |g p. 2000576 - |0 PERI:(DE-600)2882014-9 |n 3 |p 2000576 |t Solar RRL |v 5 |y 2021 |x 2367-198X |
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