TY  - JOUR
AU  - Akabori, M.
AU  - Trinh, T.Q.
AU  - Kudo, M.
AU  - Hardtdegen, H.
AU  - Schäpers, T.
AU  - Suzuki, T.
TI  - Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases
JO  - Physica / E
VL  - 42
SN  - 1386-9477
CY  - Amsterdam [u.a.]
PB  - North-Holland, Elsevier Science
M1  - PreJuSER-8909
SP  - 1130 - 1133
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - We systematically investigated electron mobility anisotropy in compressively strained, lattice-matched, and tensilely strained InGaAs quantum wells (QWs) grown on InP (0 0 1) by using Hall-bar devices with various current-flowing directions. Anisotropy of electron mobility, the highest along the [1 (1) over bar 0] direction and the lowest along [1 1 0], is systematically observed in all QWs, and well-fitted with a sinusoidal function of the current-flowing direction angle. The mobility anisotropy is minimum in the lattice-matched case and enhanced by both compressive and tensile strains in the QWs. We consider that random piezoelectric scattering, which is enhanced by the average normal strain in the QW, has anisotropy and plays an important role for the observed results. (C) 2009 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000276541200122
DO  - DOI:10.1016/j.physe.2009.11.039
UR  - https://juser.fz-juelich.de/record/8909
ER  -