TY  - JOUR
AU  - Wiefels, Stefan
AU  - Von Witzleben, Moritz
AU  - Huttemann, Michael
AU  - Bottger, Ulrich
AU  - Waser, Rainer
AU  - Menzel, Stephan
TI  - Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
JO  - IEEE transactions on electron devices
VL  - 68
IS  - 3
SN  - 1557-9646
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2021-01297
SP  - 1024 - 1030
PY  - 2021
AB  - As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000622100700013
DO  - DOI:10.1109/TED.2021.3049765
UR  - https://juser.fz-juelich.de/record/890987
ER  -