%0 Conference Paper
%A Chen, Genyu
%A Mikulics, Martin
%A Adam, Roman
%A Pericolo, Anthony
%A Serafini, John
%A Preble, Stefan
%A Cheng, J.
%A Chimera, C.
%A Komissarov, I.
%A Hardtdegen, Hilde H.
%A Sobolewski, Roman
%T Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror
%C Tokyo
%I Springer814959
%M FZJ-2021-01384
%P 1-2
%D 2020
%< [Proceedings] - IEEE, 2020. - ISBN 978-1-7281-6620-9 - doi:10.1109/IRMMW-THz46771.2020.9370390
%X We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.
%B 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
%C 8 Nov 2020 - 13 Nov 2020, Buffalo (NY)
Y2 8 Nov 2020 - 13 Nov 2020
M2 Buffalo, NY
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%U <Go to ISI:>//WOS:000662887600027
%R 10.1109/IRMMW-THz46771.2020.9370390
%U https://juser.fz-juelich.de/record/891132