TY  - CONF
AU  - Chen, Genyu
AU  - Mikulics, Martin
AU  - Adam, Roman
AU  - Pericolo, Anthony
AU  - Serafini, John
AU  - Preble, Stefan
AU  - Cheng, J.
AU  - Chimera, C.
AU  - Komissarov, I.
AU  - Hardtdegen, Hilde H.
AU  - Sobolewski, Roman
TI  - Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror
CY  - Tokyo
PB  - Springer814959
M1  - FZJ-2021-01384
SP  - 1-2
PY  - 2020
AB  - We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.
T2  - 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
CY  - 8 Nov 2020 - 13 Nov 2020, Buffalo (NY)
Y2  - 8 Nov 2020 - 13 Nov 2020
M2  - Buffalo, NY
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - <Go to ISI:>//WOS:000662887600027
DO  - DOI:10.1109/IRMMW-THz46771.2020.9370390
UR  - https://juser.fz-juelich.de/record/891132
ER  -