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| 001 | 891132 | ||
| 005 | 20230111074308.0 | ||
| 024 | 7 | _ | |a 10.1109/IRMMW-THz46771.2020.9370390 |2 doi |
| 024 | 7 | _ | |a 0022-7722 |2 ISSN |
| 024 | 7 | _ | |a 1447-073X |2 ISSN |
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| 037 | _ | _ | |a FZJ-2021-01384 |
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| 100 | 1 | _ | |a Chen, Genyu |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) |c Buffalo |d 2020-11-08 - 2020-11-13 |w NY |
| 245 | _ | _ | |a Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror |
| 260 | _ | _ | |a Tokyo |c 2020 |b Springer814959 |
| 295 | 1 | 0 | |a [Proceedings] - IEEE, 2020. - ISBN 978-1-7281-6620-9 - doi:10.1109/IRMMW-THz46771.2020.9370390 |
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| 520 | _ | _ | |a We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments. |
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| 773 | _ | _ | |a 10.1109/IRMMW-THz46771.2020.9370390 |
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