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000008913 0247_ $$2DOI$$a10.1109/LED.2009.2038078
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000008913 084__ $$2WoS$$aEngineering, Electrical & Electronic
000008913 1001_ $$0P:(DE-HGF)0$$aKordos, P.$$b0
000008913 245__ $$aRF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um
000008913 260__ $$aNew York, NY$$bIEEE$$c2010
000008913 300__ $$a180 - 182
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000008913 440_0 $$02464$$aIEEE Electron Device Letters$$v31$$x0741-3106$$y3
000008913 500__ $$aManuscript received October 21, 2009; revised November 25, 2009. First published January 26, 2010; current version published February 24, 2010. This work was performed within the frame of the European Union Project (UltraGaN) under Contract 6903 and was supported in part by the Center of Excellence CENAMOST under Grant VVCE-0049-07. The review of this letter was arranged by Editor J. A. del Alamo.
000008913 520__ $$aThe RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) for the HFETs with 0.3-mu m gate length were 54 and 58 GHz, respectively. An increase of f(T) to 61 GHz and of f(max) to 70 GHz was obtained for the MOSHFETs. The HFETs and MOSHFETs with different gate length yielded an f(T) x L-G product of 18 and 21 GHz . mu m, respectively. These are higher values than reported yet on InAlN/GaN devices and similar to those known for AlGaN/GaN HFETs.
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000008913 65320 $$2Author$$aHeterostructure field-effect transistor (HFET)
000008913 65320 $$2Author$$aInAlN/GaN
000008913 65320 $$2Author$$ametal-oxide-semiconductor HFET (MOSHFET)
000008913 65320 $$2Author$$aRF performance
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000008913 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$uFZJ
000008913 7001_ $$0P:(DE-Juel1)VDB61237$$aFox, A.$$b2$$uFZJ
000008913 7001_ $$0P:(DE-HGF)0$$aGregusová, D.$$b3
000008913 7001_ $$0P:(DE-HGF)0$$aCico, K.$$b4
000008913 7001_ $$0P:(DE-HGF)0$$aCarlin, J-F.$$b5
000008913 7001_ $$0P:(DE-HGF)0$$aGrandjean, N.$$b6
000008913 7001_ $$0P:(DE-HGF)0$$aNovák, J.$$b7
000008913 7001_ $$0P:(DE-HGF)0$$aFröhlich, K.$$b8
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000008913 8567_ $$uhttp://dx.doi.org/10.1109/LED.2009.2038078
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