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@ARTICLE{Kordos:8913,
      author       = {Kordos, P. and Mikulics, M. and Fox, A. and Gregusová, D.
                      and Cico, K. and Carlin, J-F. and Grandjean, N. and Novák,
                      J. and Fröhlich, K.},
      title        = {{RF} {P}erformance of {I}n{A}l{N}/{G}a{N} {HFET}s and
                      {MOSHFET}s with f{T}x{LG} up to 21{GH}z*um},
      journal      = {IEEE Electron Device Letters},
      volume       = {31},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-8913},
      pages        = {180 - 182},
      year         = {2010},
      note         = {Manuscript received October 21, 2009; revised November 25,
                      2009. First published January 26, 2010; current version
                      published February 24, 2010. This work was performed within
                      the frame of the European Union Project (UltraGaN) under
                      Contract 6903 and was supported in part by the Center of
                      Excellence CENAMOST under Grant VVCE-0049-07. The review of
                      this letter was arranged by Editor J. A. del Alamo.},
      abstract     = {The RF performance of lattice-matched InAlN/GaN
                      heterostructure field-effect transistors (HFETs) and
                      Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs)
                      with varied gate length was evaluated. The current gain
                      cutoff frequency f(T) and the maximum oscillation frequency
                      f(max) for the HFETs with 0.3-mu m gate length were 54 and
                      58 GHz, respectively. An increase of f(T) to 61 GHz and of
                      f(max) to 70 GHz was obtained for the MOSHFETs. The HFETs
                      and MOSHFETs with different gate length yielded an f(T) x
                      L-G product of 18 and 21 GHz . mu m, respectively. These are
                      higher values than reported yet on InAlN/GaN devices and
                      similar to those known for AlGaN/GaN HFETs.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000274995300001},
      doi          = {10.1109/LED.2009.2038078},
      url          = {https://juser.fz-juelich.de/record/8913},
}