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| 001 | 8913 | ||
| 005 | 20200604161437.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/LED.2009.2038078 |
| 024 | 7 | _ | |2 WOS |a WOS:000274995300001 |
| 024 | 7 | _ | |2 ISSN |a 0741-3106 |
| 024 | 7 | _ | |2 altmetric |a altmetric:20991497 |
| 037 | _ | _ | |a PreJuSER-8913 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Kordos, P. |b 0 |
| 245 | _ | _ | |a RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2010 |
| 300 | _ | _ | |a 180 - 182 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 440 | _ | 0 | |0 2464 |a IEEE Electron Device Letters |v 31 |x 0741-3106 |y 3 |
| 500 | _ | _ | |a Manuscript received October 21, 2009; revised November 25, 2009. First published January 26, 2010; current version published February 24, 2010. This work was performed within the frame of the European Union Project (UltraGaN) under Contract 6903 and was supported in part by the Center of Excellence CENAMOST under Grant VVCE-0049-07. The review of this letter was arranged by Editor J. A. del Alamo. |
| 520 | _ | _ | |a The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) for the HFETs with 0.3-mu m gate length were 54 and 58 GHz, respectively. An increase of f(T) to 61 GHz and of f(max) to 70 GHz was obtained for the MOSHFETs. The HFETs and MOSHFETs with different gate length yielded an f(T) x L-G product of 18 and 21 GHz . mu m, respectively. These are higher values than reported yet on InAlN/GaN devices and similar to those known for AlGaN/GaN HFETs. |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a Heterostructure field-effect transistor (HFET) |
| 653 | 2 | 0 | |2 Author |a InAlN/GaN |
| 653 | 2 | 0 | |2 Author |a metal-oxide-semiconductor HFET (MOSHFET) |
| 653 | 2 | 0 | |2 Author |a RF performance |
| 700 | 1 | _ | |0 P:(DE-Juel1)128613 |a Mikulics, M. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB61237 |a Fox, A. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Gregusová, D. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Cico, K. |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Carlin, J-F. |b 5 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Grandjean, N. |b 6 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Novák, J. |b 7 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Fröhlich, K. |b 8 |
| 773 | _ | _ | |0 PERI:(DE-600)2034325-5 |a 10.1109/LED.2009.2038078 |g Vol. 31, p. 180 - 182 |p 180 - 182 |q 31<180 - 182 |t IEEE Electron Device Letters |v 31 |x 0741-3106 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/LED.2009.2038078 |
| 909 | C | O | |o oai:juser.fz-juelich.de:8913 |p VDB |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |a DE-HGF |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |2 StatID |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB799 |d 31.12.2010 |g IBN |k IBN-1 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |g JARA |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)118204 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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