% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Carigiet:891485,
      author       = {Carigiet, Fabian and Brabec, Christoph and Baumgartner,
                      Franz P.},
      title        = {{L}ong-term power degradation analysis of crystalline
                      silicon {PV} modules using indoor and outdoor measurement
                      techniques},
      journal      = {Renewable $\&$ sustainable energy reviews},
      volume       = {144},
      issn         = {1364-0321},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2021-01559},
      pages        = {111005 -},
      year         = {2021},
      abstract     = {Annual degradation rates of PV modules are important in the
                      yield prediction. For a high-quality PV module, these rates
                      are lower than the measurement uncertainty of a nominal
                      power measurement performed in todays most advanced
                      certified photovoltaic reference laboratory. Therefore, the
                      analysis requires a well thought out methodology that can
                      compare the data relative to each other or relative to an
                      unused module stored in the dark on an annual base. Over the
                      past 10 years, several multi c-Si and HIT modules have been
                      accurately monitored in a string and single module setup by
                      an outdoor performance measurement system. Additionally, all
                      modules have been dismantled and measured using an indoor
                      flasher measurement system once every year. With this unique
                      measurement setup, the annual degradation rates of multi
                      c-Si modules and HIT modules are quantified based on three
                      different analysis methodologies. The multi c-Si modules
                      showed an average annual degradation rate of $0.18\%$ ±
                      $0.06\%$ and $0.29\%$ ± $0.06\%$ measured by the outdoor
                      and indoor system, respectively. The indoor analysis of the
                      HIT modules yielded an average annual degradation of
                      $0.26\%$ ± $0.05\%.$ That corresponds to half of the
                      degradation observed by the outdoor analysis method. Further
                      evaluations of the performance ratio PR confirmed the
                      results gained by the indoor methodology. The comparison of
                      the standard PR with a temperature-corrected PR’STC for
                      both technologies showed that the benefit of the lower
                      temperature coefficient of the HIT technology is eliminated
                      by its worse low light behaviour.},
      cin          = {IEK-11},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-11-20140314},
      pnm          = {121 - Photovoltaik und Windenergie (POF4-121)},
      pid          = {G:(DE-HGF)POF4-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000649678100004},
      doi          = {10.1016/j.rser.2021.111005},
      url          = {https://juser.fz-juelich.de/record/891485},
}