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@ARTICLE{Barthel:891724,
      author       = {Barthel, Armin and Roberts, Joseph and Napari, Mari and
                      Frentrup, Martin and Huq, Tahmida and Kovács, András and
                      Oliver, Rachel and Chalker, Paul and Sajavaara, Timo and
                      Massabuau, Fabien},
      title        = {{T}i {A}lloyed α-{G}a2{O}3: {R}oute towards {W}ide {B}and
                      {G}ap {E}ngineering},
      journal      = {Micromachines},
      volume       = {11},
      number       = {12},
      issn         = {2072-666X},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2021-01697},
      pages        = {1128 -},
      year         = {2020},
      abstract     = {The suitability of Ti as a band gap modifier for α-Ga2O3
                      was investigated, taking advantage of the isostructural α
                      phases and high band gap difference between Ti2O3 and Ga2O3.
                      Films of (Ti,Ga)2O3 were synthesized by atomic layer
                      deposition on sapphire substrates, and characterized to
                      determine how crystallinity and band gap vary with
                      composition for this alloy. We report the deposition of high
                      quality α-(TixGa1−x)2O3 films with x = $3.7\%.$ For
                      greater compositions the crystalline quality of the films
                      degrades rapidly, where the corundum phase is maintained in
                      films up to x = $5.3\%,$ and films containing greater Ti
                      fractions being amorphous. Over the range of achieved
                      corundum phase films, that is $0\%$ ≤ x ≤ $5.3\%,$ the
                      band gap energy varies by ∼270 meV. The ability to
                      maintain a crystalline phase at low fractions of Ti,
                      accompanied by a modification in band gap, shows promising
                      prospects for band gap engineering and the development of
                      wavelength specific solar-blind photodetectors based on
                      α-Ga2O3.},
      cin          = {ER-C-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / ESTEEM3 - Enabling Science and Technology through European
                      Electron Microscopy (823717)},
      pid          = {G:(DE-HGF)POF3-143 / G:(EU-Grant)823717},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {33419277},
      UT           = {WOS:000602446200001},
      doi          = {10.3390/mi11121128},
      url          = {https://juser.fz-juelich.de/record/891724},
}