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@ARTICLE{Gospodaric:891827,
      author       = {Gospodaric, Pika and Młyńczak, E. and Soldatov, I. and
                      Kákay, A. and Bürgler, D. E. and Plucinski, L. and
                      Schäfer, R. and Fassbender, J. and Schneider, C. M.},
      title        = {{M}ultistate current-induced magnetization switching in
                      {A}u/{F}e/{M}g{O}(001) epitaxial heterostructures},
      journal      = {Physical review research},
      volume       = {3},
      number       = {2},
      issn         = {2643-1564},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2021-01752},
      pages        = {023089},
      year         = {2021},
      abstract     = {Magnetization switching using in-plane charge current
                      recently has been widely investigated in heavy
                      metal/ferromagnet bilayers with the switching mechanism
                      usually attributed to the action of the spin-orbit coupling.
                      Here we study in-plane current induced magnetization
                      switching in model epitaxial bilayers that consist of
                      Au(001) and Fe(001) grown on MgO(001). We use the planar
                      Hall effect combined with magnetooptical Kerr effect (MOKE)
                      microscopy to investigate magnetic properties of the
                      bilayers and current-induced switching. We show that a
                      current density beyond 1.4×107 A/cm can be employed for
                      reproducible electrical switching of the magnetization
                      between multiple stable states that correspond to different
                      arrangements of magnetic domains with magnetization
                      direction along one of the in-plane easy magnetization axes
                      of the Fe(001) film. Lower current densities result in
                      stable intermediate transversal resistances which are
                      interpreted based on MOKE-microscopy investigations as
                      resulting from the current-induced magnetic domain structure
                      that is formed in the area of the Hall cross. We find that
                      the physical mechanism of the current-induced magnetization
                      switching of the Au/Fe/MgO(001) system at room temperature
                      can be fully explained by the Oersted field, which is
                      generated by the charge current flowing mostly through the
                      Au layer.},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Quantum Computing (POF4-522)},
      pid          = {G:(DE-HGF)POF4-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000648509300005},
      doi          = {10.1103/PhysRevResearch.3.023089},
      url          = {https://juser.fz-juelich.de/record/891827},
}