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@ARTICLE{Kutovyi:892585,
      author       = {Kutovyi, Yurii and Piatnytsia, Volodymyr and Boichuk,
                      Nazarii and Zadorozhnyi, Ihor and Li, Jie and Petrychuk,
                      Mykhailo and Vitusevich, Svetlana},
      title        = {{B}oosting the {P}erformance of {L}iquid‐{G}ated
                      {N}anotransistor {B}iosensors {U}sing {S}ingle‐{T}rap
                      {P}henomena},
      journal      = {Advanced electronic materials},
      volume       = {7},
      number       = {4},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2021-02182},
      pages        = {2000858 -1-10},
      year         = {2021},
      abstract     = {In small-area transistors, the trapping/detrapping of
                      charge carriers to/from a single trap located in the gate
                      oxide near the Si/SiO2 interface leads to the discrete
                      switching of the transistor drain current, known as
                      single-trap phenomena (STP), resulting in random telegraph
                      signals. Utilizing the STP-approach, liquid-gated (LG)
                      nanowire (NW) field-effect transistor biosensors have
                      recently been proposed for ultimate biosensing with enhanced
                      sensitivity. In this study, the impact of channel doping
                      concen-tration on the capture process of charge carriers by
                      a single trap in LG silicon NW structures is investigated. A
                      significant effect of the channel doping concentration on
                      the single-trap dynamic is revealed. To under-stand the
                      mechanism behind unusual capture time behavior compared to
                      that predicted by the classical Shockley–Read–Hall
                      theory, an analytical model based on the rigorous
                      description of the additional energy barrier that charge
                      carriers have to overcome to be captured by the trap at
                      dif-ferent gate voltages is developed. The enhancement of
                      the sensitivity for single-trap phenomena biosensing with an
                      increase of the channel doping concentration is explained
                      within the framework of the proposed analytical model. The
                      results open prospects for the development of advanced
                      single trap-based devices.},
      cin          = {IBI-3},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IBI-3-20200312},
      pnm          = {524 - Molecular and Cellular Information Processing
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000628872000001},
      doi          = {10.1002/aelm.202000858},
      url          = {https://juser.fz-juelich.de/record/892585},
}