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| Hauptseite > Publikationsdatenbank > Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena > print |
| Hauptseite > Publikationsdatenbank > Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena > print |
| 001 | 892585 | ||
| 005 | 20220930130317.0 | ||
| 024 | 7 | _ | |a 10.1002/aelm.202000858 |2 doi |
| 024 | 7 | _ | |a 2128/27866 |2 Handle |
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| 037 | _ | _ | |a FZJ-2021-02182 |
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| 100 | 1 | _ | |a Kutovyi, Yurii |0 P:(DE-Juel1)167225 |b 0 |
| 245 | _ | _ | |a Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena |
| 260 | _ | _ | |a Weinheim |c 2021 |b Wiley-VCH Verlag GmbH & Co. KG |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a In small-area transistors, the trapping/detrapping of charge carriers to/from a single trap located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the transistor drain current, known as single-trap phenomena (STP), resulting in random telegraph signals. Utilizing the STP-approach, liquid-gated (LG) nanowire (NW) field-effect transistor biosensors have recently been proposed for ultimate biosensing with enhanced sensitivity. In this study, the impact of channel doping concen-tration on the capture process of charge carriers by a single trap in LG silicon NW structures is investigated. A significant effect of the channel doping concentration on the single-trap dynamic is revealed. To under-stand the mechanism behind unusual capture time behavior compared to that predicted by the classical Shockley–Read–Hall theory, an analytical model based on the rigorous description of the additional energy barrier that charge carriers have to overcome to be captured by the trap at dif-ferent gate voltages is developed. The enhancement of the sensitivity for single-trap phenomena biosensing with an increase of the channel doping concentration is explained within the framework of the proposed analytical model. The results open prospects for the development of advanced single trap-based devices. |
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| 700 | 1 | _ | |a Piatnytsia, Volodymyr |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Boichuk, Nazarii |0 P:(DE-Juel1)171802 |b 2 |u fzj |
| 700 | 1 | _ | |a Zadorozhnyi, Ihor |0 P:(DE-Juel1)164241 |b 3 |
| 700 | 1 | _ | |a Li, Jie |0 P:(DE-Juel1)176824 |b 4 |
| 700 | 1 | _ | |a Petrychuk, Mykhailo |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Vitusevich, Svetlana |0 P:(DE-Juel1)128738 |b 6 |e Corresponding author |
| 773 | _ | _ | |a 10.1002/aelm.202000858 |g Vol. 7, no. 4, p. 2000858 - |0 PERI:(DE-600)2810904-1 |n 4 |p 2000858 -1-10 |t Advanced electronic materials |v 7 |y 2021 |x 2199-160X |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/892585/files/aelm.202000858.pdf |y OpenAccess |
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