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@PHDTHESIS{Kutovyi:893044,
author = {Kutovyi, Yurii},
title = {{S}ingle-{T}rap {P}henomena in {N}anowire {B}iosensors},
volume = {238},
school = {Dortmund, Univ},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2021-02522},
isbn = {978-3-95806-544-4},
series = {Schriften des Forschungszentrums Jülich Reihe
Schlüsseltechnologien / Key Technologies},
pages = {171},
year = {2021},
note = {Dissertation, Dortmund, Univ, 2021},
abstract = {Single-trap phenomena (STP) in nanoscale transistor devices
possess outstanding propertiesthat are promising for many
useful and important applications including information
technologiesand biosensing. In this thesis, a novel
biosensing approach based on monitoring of STPparameters as
a function of target biomolecules on the surface of
liquid-gated (LG) silicon (Si)nanowire (NW) field-effect
transistor (FET) biosensors was proposed and demonstrated.
Toenhance STP dynamics and improve the efficiency of the
approach, unique two-layer (TL) NWFETs with NW channels
consisting of two Si layers with different concentrations of
dopantswere designed and fabricated. A stable and
leakage-free operation in liquid confirms the highquality of
TL NW devices. At the same time, fabricated TL
nanostructures are conceptuallydifferent from the
conventional uniformly doped Si NWs and demonstrate more
statisticallypronounced STP with considerably stronger
capture time dependencies on drain current comparedto that
predicted by classical Shockley-Read-Hall theory. A
comprehensive analysis ofthe experimental data measured at
low temperatures allowed the identification of the origin
ofsingle traps in TL NWs as a vacancy-boron complex. Several
important effects enabling the advancementof sensing
capabilities of STP-based devices were revealed using
fabricated TL NWFET biosensors. First, a significant effect
of channel doping on the quantum tunneling dynamicsof charge
carriers to/from a single trap was registered in TL
nanostructures, analyzed, andexplained within the framework
of proposed analytical model. Second, a distinct
fine-tuningeffect of STP parameters by applying a back-gate
potential to LG TL NW FETs was experimentallyrevealed and
supported by numerical simulations. Such a unique feature of
STP in TLNWs allows the sensitivity of STP-based biosensors
to be enhanced in a well-controllable way.Furthermore, STP
in NW FETs offer a great opportunity for the suppression of
low-frequencynoise. Considering a trap occupancy probability
(g-factor) as a signal, a new method for theestimation of
g-factor noise was proposed and utilized. As a result, the
effective suppressionof the low-frequency noise even beyond
the thermal noise limit was experimentally and
numericallydemonstrated. The derived analytical model showed
an excellent agreement with theobtained results underlining
the importance of STP for biosensing applications. Utilizing
theunique advantages of STP in fabricated TL NW FET
biosensors, several proof-of-concept applicationsincluding
high-sensitive detection of target chemical and biological
analytes: monoanddivalent ions, ascorbate molecules, and
amyloid-beta peptides were demonstrated. Thus,the performed
experiments together with the developed analytical models
represent a major advancein the field of biosensors and pave
the way for the next generation of novel
ultrasensitivebioelectronic sensors exploiting single-trap
phenomena.},
cin = {IBI-3},
cid = {I:(DE-Juel1)IBI-3-20200312},
pnm = {899 - ohne Topic (POF4-899)},
pid = {G:(DE-HGF)POF4-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
urn = {urn:nbn:de:0001-2021080939},
url = {https://juser.fz-juelich.de/record/893044},
}