Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

guest :: login JuSER
		Search		Submit		Personalize Your alerts Your baskets Your searches		Help

Home > Publications database > Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns > Access to Fulltext

Information
Discussion
Files
Plots

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns - FZJ-2021-02533

Main document file(s):

Similar records

JuSER :: :: :: ::
Powered by v1.1.7 |
Maintained by

Impressum | Data Privacy Policy

This site is also available in the following languages:
Deutsch English