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@ARTICLE{Das:893095,
      author       = {Das, Basita and Liu, Zhifa and Aguilera, Irene and Rau, Uwe
                      and Kirchartz, Thomas},
      title        = {{D}efect tolerant device geometries for lead-halide
                      perovskites},
      journal      = {Materials advances},
      volume       = {2},
      number       = {11},
      issn         = {2633-5409},
      address      = {Cambridge},
      publisher    = {Royal Society of Chemistry},
      reportid     = {FZJ-2021-02554},
      pages        = {3655},
      year         = {2021},
      abstract     = {The term “defect tolerance” is widely used in the
                      literature to describe materials such as lead-halides
                      perovskites, where solution-processed polycrystalline thin
                      films exhibit long non-radiative lifetimes of microseconds
                      or longer. Studies on defect tolerance of materials mostly
                      look at the properties of the host material and/or the
                      chemical nature of defects that affect their capture
                      coefficients. However, the recombination activity of a
                      defect is not only a function of its capture coefficients
                      but also depends on the electrostatics and the design of the
                      layer stack of a photovoltaic device. Here we study the
                      influence of device geometry on defect tolerance by
                      combining calculations of capture coefficients with device
                      simulations. We derive generic device design principles
                      which can inhibit recombination inside a photovoltaic device
                      for a given set of capture coefficients based on the idea of
                      slowing down the slower of the two processes (electron and
                      hole capture) even further by modifying electron and hole
                      injection into the absorber layer. We use the material
                      parameters and typical p–i–n device geometry
                      representing methylammonium lead halide perovskites solar
                      cells to illustrate the application of our generic design
                      principles to improve specific devices.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Photovoltaik und Windenergie (POF4-121)},
      pid          = {G:(DE-HGF)POF4-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000644707600001},
      doi          = {10.1039/D0MA00902D},
      url          = {https://juser.fz-juelich.de/record/893095},
}