guest ::
| Home > Publications database > Ab initio screening of metallic MAX ceramics for advanced interconnect applications > print |
| Home > Publications database > Ab initio screening of metallic MAX ceramics for advanced interconnect applications > print |
| 001 | 893153 | ||
| 005 | 20210628150951.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevMaterials.5.056002 |2 doi |
| 024 | 7 | _ | |a 2475-9953 |2 ISSN |
| 024 | 7 | _ | |a 2476-0455 |2 ISSN |
| 024 | 7 | _ | |a 2128/27940 |2 Handle |
| 024 | 7 | _ | |a WOS:000655936200005 |2 WOS |
| 037 | _ | _ | |a FZJ-2021-02598 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Sankaran, Kiroubanand |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Ab initio screening of metallic MAX ceramics for advanced interconnect applications |
| 260 | _ | _ | |a College Park, MD |c 2021 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1623417941_10329 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a The potential of a wide range of layered ternary carbide and nitride Mn+1AXn [an early transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or N (X)] phases as conductors in interconnect metal lines in advanced complementary metal-oxide-semiconductor (CMOS) technology nodes has been evaluated using automated first-principles simulations based on density-functional theory. The resistivity scaling potential of these compounds, i.e., the expected sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes. |
| 536 | _ | _ | |a 522 - Quantum Computing (POF4-522) |0 G:(DE-HGF)POF4-522 |c POF4-522 |x 0 |f POF IV |
| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 700 | 1 | _ | |a Moors, Kristof |0 P:(DE-Juel1)180184 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Tőkei, Zsolt |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Adelmann, Christoph |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Pourtois, Geoffrey |0 P:(DE-HGF)0 |b 4 |
| 773 | _ | _ | |a 10.1103/PhysRevMaterials.5.056002 |g Vol. 5, no. 5, p. 056002 |0 PERI:(DE-600)2898355-5 |n 5 |p 056002 |t Physical review materials |v 5 |y 2021 |x 2475-9953 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/893153/files/PhysRevMaterials.5.056002.pdf |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:893153 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)180184 |
| 910 | 1 | _ | |a External Institute |0 I:(DE-HGF)0 |k Extern |b 3 |6 P:(DE-HGF)0 |
| 913 | 0 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |3 G:(DE-HGF)POF3 |2 G:(DE-HGF)POF3-500 |4 G:(DE-HGF)POF |v Controlling Electron Charge-Based Phenomena |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-522 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Quantum Computing |x 0 |
| 914 | 1 | _ | |y 2021 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |d 2021-01-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |d 2021-01-27 |
| 915 | _ | _ | |a American Physical Society Transfer of Copyright Agreement |0 LIC:(DE-HGF)APS-112012 |2 HGFVOC |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b PHYS REV MATER : 2019 |d 2021-01-27 |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0113 |2 StatID |b Science Citation Index Expanded |d 2021-01-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |d 2021-01-27 |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |d 2021-01-27 |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |d 2021-01-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0160 |2 StatID |b Essential Science Indicators |d 2021-01-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Clarivate Analytics Master Journal List |d 2021-01-27 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | 1 | _ | |a FullTexts |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|